Simulation of Transport in Nanodevices
(2016)

Nonfiction

eBook

Provider: hoopla

Details

PUBLISHED
[United States] : Wiley, 2016
Made available through hoopla
DESCRIPTION

1 online resource (401 pages)

ISBN/ISSN
9781118761885 MWT18107542, 111876188X 18107542
LANGUAGE
English
NOTES

Linear current-voltage pattern, has been and continues to be the basis for characterizing, evaluating performance, and designing integrated circuits, but is shown not to hold its supremacy as channel lengths are being scaled down. In a nanoscale circuit with reduced dimensionality in one or more of the three Cartesian directions, quantum effects transform the carrier statistics. In the high electric field, the collision free ballistic transform is predicted, while in low electric field the transport remains predominantly scattering-limited. In a micro/nano-circuit, even a low logic voltage of 1 V is above the critical voltage triggering nonohmic behavior that results in ballistic current saturation. A quantum emission may lower this ballistic velocity

Mode of access: World Wide Web

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